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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 22 — Aug. 1, 2013
  • pp: 5426–5429

Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

I-Wen Feng, Weiping Zhao, Jing Li, Jingyu Lin, Hongxing Jiang, and John Zavada  »View Author Affiliations

Applied Optics, Vol. 52, Issue 22, pp. 5426-5429 (2013)

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Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al0.75Ga0.25N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was 6dB/cm.

© 2013 Optical Society of America

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(230.7370) Optical devices : Waveguides

ToC Category:
Optical Devices

Original Manuscript: May 1, 2013
Revised Manuscript: July 3, 2013
Manuscript Accepted: July 5, 2013
Published: July 24, 2013

I-Wen Feng, Weiping Zhao, Jing Li, Jingyu Lin, Hongxing Jiang, and John Zavada, "Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides," Appl. Opt. 52, 5426-5429 (2013)

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