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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 23 — Aug. 10, 2013
  • pp: 5851–5855

Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics

Chih-Tsang Hung, Tsung-Lin Ho, and Tien-Chang Lu  »View Author Affiliations

Applied Optics, Vol. 52, Issue 23, pp. 5851-5855 (2013)

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We present AlGaAs-InGaAs multiquantum wells photonic crystal surface-emitting lasers by using the transfer matrix method and coupled wave method to achieve a low-threshold operation. The extremely low-threshold gain is achieved by adopting an asymmetric cladding layer design to enhance both of the vertical optical confinement factors for the quantum wells and photonic crystal (PC). By modifying the composition of the AlGaAs layer to raise the refractive index in the p-type cladding, optical field distribution will obviously be shifted to the p side. Hence, it results in a significant coupling enhancement between the optical mode profile and the PC layer. The optimized value of the vertically optical confinement factor of the PC layer is 13.94%, and the corresponding threshold gain can be as low as 19.45cm1.

© 2013 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(050.5298) Diffraction and gratings : Photonic crystals

ToC Category:
Diffraction and Gratings

Original Manuscript: April 29, 2013
Revised Manuscript: July 7, 2013
Manuscript Accepted: July 12, 2013
Published: August 9, 2013

Chih-Tsang Hung, Tsung-Lin Ho, and Tien-Chang Lu, "Asymmetric design of photonic crystal surface-emitting lasers with low-threshold characteristics," Appl. Opt. 52, 5851-5855 (2013)

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