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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 24 — Aug. 20, 2013
  • pp: 5941–5948

Design of a silicon Mach–Zehnder modulator with a U-type PN junction

Tongtong Cao, Yonghao Fei, Libin Zhang, Yanmei Cao, and Shaowu Chen  »View Author Affiliations


Applied Optics, Vol. 52, Issue 24, pp. 5941-5948 (2013)
http://dx.doi.org/10.1364/AO.52.005941


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Abstract

We have developed a silicon depletion-mode modulator featuring a novel U-type PN junction that enables a substantial improvement in electro-optical modulation efficiency. Through electrical, optical, and manufacturing process simulations, an ultralow VπL of 0.63V·cm is exhibited with 3 V reverse bias. The high modulation efficiency enables a high extinction ratio (ER) of >17dB with only a 1 mm phase shifter when the excess loss at the “on” state is 2 dB. The ER can maintain >12dB at 28GHz operation with a 3 V peak-to-peak voltage due to the small voltage attenuation of the short phase shifter.

© 2013 Optical Society of America

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(250.7360) Optoelectronics : Waveguide modulators
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: December 5, 2012
Revised Manuscript: March 1, 2013
Manuscript Accepted: July 15, 2013
Published: August 14, 2013

Citation
Tongtong Cao, Yonghao Fei, Libin Zhang, Yanmei Cao, and Shaowu Chen, "Design of a silicon Mach–Zehnder modulator with a U-type PN junction," Appl. Opt. 52, 5941-5948 (2013)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-52-24-5941


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