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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 4 — Feb. 1, 2013
  • pp: 750–754

Photovoltaic ultraviolet detectors based on Zr0.04Ti0.96O2 solid solution nanowire arrays

Haifeng Zhang, Hailong Li, Min Zhang, Caihui Feng, Xuehui Gu, Yang Xu, Jingran Zhou, and Shengping Ruan  »View Author Affiliations


Applied Optics, Vol. 52, Issue 4, pp. 750-754 (2013)
http://dx.doi.org/10.1364/AO.52.000750


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Abstract

A Zr0.04Ti0.96O2 solid solution nanowire (NW) array was prepared and characterized in detail. Zr doping effectively changed ZrxTi1xO2’s bandgap and led to better photoelectric properties, which indicated the possibility for deep UV detector fabrication. Based on the NW array, high-performance Schottky diode UV detector with Ag electrode was fabricated. At 3V bias, the dark current of the detector is only 5 nA, and a high photoresponse of 5.6A/W was achieved because of the internal gain. The ratio of photocurrent to dark current is more than three orders of magnitude. The device is promising for large-area UV detector applications.

© 2013 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Optoelectronics

History
Original Manuscript: October 11, 2012
Manuscript Accepted: December 18, 2012
Published: January 30, 2013

Citation
Haifeng Zhang, Hailong Li, Min Zhang, Caihui Feng, Xuehui Gu, Yang Xu, Jingran Zhou, and Shengping Ruan, "Photovoltaic ultraviolet detectors based on Zr0.04Ti0.96O2 solid solution nanowire arrays," Appl. Opt. 52, 750-754 (2013)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-52-4-750


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References

  1. L. Liou and B. Nabet, “Simple analytical model of bias dependence of the photocurrent of metal–semiconductor–metal photodetectors,” Appl. Opt. 35, 15–23 (1996). [CrossRef]
  2. H. Zhang, M. Zhang, C. Feng, W. Chen, C. Liu, J. Zhou, and S. Ruan, “Schottky barrier characteristics and internal gain mechanism of TiO2 UV detectors,” Appl. Opt. 51, 894–897 (2012). [CrossRef]
  3. Y. Han, C. Fan, G. Wu, H. Chen, and M. Wang, “Low-temperature solution processed ultraviolet photodetector based on an ordered TiO2 nanorod array–polymer hybrid,” J. Phys. Chem. C 115, 13438–13445 (2011). [CrossRef]
  4. G. W. Anderson, L. E. Chipman, F. J. Kub, D. Park, M. Y. Frankel, T. F. Carruthers, J. A. Modolo, K. D. Hobart, and D. S. Katzer, “Gallium arsenide metal–semiconductor–metal photodiodes as optoelectronic mixers for microwave single–sideband modulation,” Appl. Opt. 37, 28–33 (1998). [CrossRef]
  5. F. Yan, X. Xin, S. Aslam, Y. Zhao, D. Franz, J. H. Zhao, and M. Weiner, “4H-SiC UV photo detectors with large area and very high specific detectivity,” IEEE J. Quantum Electron. 40, 1315–1320 (2004). [CrossRef]
  6. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghib, “High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN,” Appl. Phys. Lett. 74, 762–764 (1999). [CrossRef]
  7. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513–517 (2005). [CrossRef]
  8. X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009). [CrossRef]
  9. S. V. Averine, P. I. Kuznetzov, V. A. Zhitov, and N. V. Alkeev, “Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD,” Solid-State Electron. 52, 618–624 (2008). [CrossRef]
  10. W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66  O thin films,” Appl. Phys. Lett. 78, 193509 (2001). [CrossRef]
  11. H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2 based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32, 653–655 (2011). [CrossRef]
  12. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008). [CrossRef]
  13. V. V. Kuryatkov, B. A. Borisov, and S. A. Nikishin, “247 nm solar-blind ultraviolet p-i-n photodetector,” J. Appl. Phys. 100, 096104 (2006). [CrossRef]
  14. W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, and H. Shen, “Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors,” Appl. Phys. Lett. 82, 3424–3426 (2003). [CrossRef]
  15. Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett. 98, 221112 (2011). [CrossRef]
  16. H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011). [CrossRef]
  17. H. Zhang, S. Ruan, H. Li, M. Zhang, K. Lv, C. Feng, and W. Chen, “Schottky diode ultraviolet detector based on TiO2 nanowire array,” IEEE Electron Device Lett. 33, 83–85(2012). [CrossRef]
  18. X. Feng, K. Shankar, Oomman K. Varghese, M. Paulose, T. J. Latempa, and C. A. Grimes, “Vertically aligned single crystal TiO2 nanowire arrays grown directly on transparent conducting oxide coated glass: synthesis details and applications,” Nano Lett. 8, 3781–3786 (2008). [CrossRef]
  19. G. Liu, H. Lu, Z. Chen, F. Li, L. Wang, J. Watts, G. Lu, and H. Cheng, “Ti-Zr-O nanotube arrays with controlled morphology, crystal structure and optical properties,” J. Nanosci. Nanotechnol. 9, 6501–6510 (2009). [CrossRef]
  20. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001). [CrossRef]
  21. J. Zou, Q. Zhang, K. Huang, and N. Marzari, “Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films,” J. Phys. Chem. C 114, 10725–10729 (2010). [CrossRef]

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