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Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy |
Applied Optics, Vol. 52, Issue 5, pp. 1035-1040 (2013)
http://dx.doi.org/10.1364/AO.52.001035
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Abstract
The temperature dependence of the mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser has been studied by reflectance difference spectroscopy at different temperatures ranging from 80 to 330 K. The anisotropic broadening width and the anisotropic integrated area of the cavity mode under different temperatures are also determined. The relation between the mode splitting and the birefringence is obtained by theoretical calculation using a Jones matrix approach. The temperature dependence of the energy position of the cavity mode and the quantum well transition are also determined by nearly normal reflectance and photoluminescence, respectively.
© 2013 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(140.7260) Lasers and laser optics : Vertical cavity surface emitting lasers
ToC Category:
Materials
History
Original Manuscript: October 8, 2012
Revised Manuscript: January 2, 2013
Manuscript Accepted: January 4, 2013
Published: February 8, 2013
Citation
Jinling Yu, Yonghai Chen, Shuying Cheng, and Yunfeng Lai, "Temperature dependence of anisotropic mode splitting induced by birefringence in an InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference spectroscopy," Appl. Opt. 52, 1035-1040 (2013)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-52-5-1035
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