Abstract
We propose and analyze a polarization rotator based on a bend asymmetric-slab waveguide on the silicon-on-insulator platform. The device can be fabricated using standard complementary metal–oxide–semiconductor process involving only two dry etching steps. Compared with the formerly reported polarization rotators based on two-step etching, our introduced device demonstrates a significant improvement for fabrication tolerance. Furthermore, an ultra compact structure of conversion length, an insertion loss of only 0.5 dB, and an extinction ratio of for both TE to TM polarization conversion and TM to TE polarization conversion are exhibited. Operation wavelength and the influence of environmental temperature on our device are also discussed.
© 2013 Optical Society of America
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