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Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates |
Applied Optics, Vol. 52, Issue 7, pp. 1358-1367 (2013)
http://dx.doi.org/10.1364/AO.52.001358
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Abstract
In this paper, we propose a method to analyze the light extraction efficiency (LEE) enhancement of a nanopatterned sapphire substrates (NPSS) light-emitting diode (LED) by comparing wave optics software with ray optics software. Finite-difference time-domain (FDTD) simulations represent the wave optics software and Light Tools (LTs) simulations represent the ray optics software. First, we find the trends of and an optimal solution for the LEE enhancement when the 2D-FDTD simulations are used to save on simulation time and computational memory. The rigorous coupled-wave analysis method is utilized to explain the trend we get from the 2D-FDTD algorithm. The optimal solution is then applied in 3D-FDTD and LTs simulations. The results are similar and the difference in LEE enhancement between the two simulations does not exceed 8.5% in the small LED chip area. More than
© 2013 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(080.1753) Geometric optics : Computation methods
(220.4241) Optical design and fabrication : Nanostructure fabrication
(050.6624) Diffraction and gratings : Subwavelength structures
ToC Category:
Optical Devices
History
Original Manuscript: September 20, 2012
Revised Manuscript: January 2, 2013
Manuscript Accepted: January 17, 2013
Published: February 22, 2013
Citation
Jui-Wen Pan, Pei-Jung Tsai, Kao-Der Chang, and Yung-Yuan Chang, "Light extraction efficiency analysis of GaN-based light-emitting diodes with nanopatterned sapphire substrates," Appl. Opt. 52, 1358-1367 (2013)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-52-7-1358
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