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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 52, Iss. 8 — Mar. 10, 2013
  • pp: 1676–1681

Birefringence elimination of bismuth germanate crystal in quasi-reciprocal reflective optical voltage sensor

Xiujuan Feng, Lijing Li, Xiaxiao Wang, Chunxi Zhang, Jia Yu, and Chuansheng Li  »View Author Affiliations

Applied Optics, Vol. 52, Issue 8, pp. 1676-1681 (2013)

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Bismuth germanate (Bi4Ge3O12, BGO) has been widely utilized for the application of Pockels effect-based voltage and electric field sensors, because it possesses no unwanted effects ideally. However, there are multiple birefringences in BGO crystal induced by natural imperfections, temperature-dependent strain, and external pressure (or stress), which influences the demodulation of the Pockels effect induced by the voltage to be measured. For a Pockels effect-based quasi-reciprocal reflective optical voltage sensor, the influences of the multiple birefringences in BGO crystal are investigated and an elimination scheme is also proposed in this paper. The feasibility of the proposed elimination scheme is simulated and experimentally verified.

© 2013 Optical Society of America

OCIS Codes
(060.2370) Fiber optics and optical communications : Fiber optics sensors
(230.2090) Optical devices : Electro-optical devices
(260.1440) Physical optics : Birefringence

ToC Category:
Fiber Optics and Optical Communications

Original Manuscript: October 31, 2012
Revised Manuscript: January 6, 2013
Manuscript Accepted: January 6, 2013
Published: March 7, 2013

Xiujuan Feng, Lijing Li, Xiaxiao Wang, Chunxi Zhang, Jia Yu, and Chuansheng Li, "Birefringence elimination of bismuth germanate crystal in quasi-reciprocal reflective optical voltage sensor," Appl. Opt. 52, 1676-1681 (2013)

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