Abstract
We present a thermal rectification device concept based on far-field radiative exchange between two selective emitters. Rectification is achieved due to a large contrast between the two selective emitters’ thermo-optical properties. A simple device constituted by two multilayer samples made of metallic (Au) and semiconductor (Si and HDSi) thin films is proposed. This device shows a rectification ratio increasing with temperature up to 19% for a temperature difference of . Further optimization would allow larger rectification values. The presented results might be useful for energy conversion devices, engineering of smart radiative coolers/insulators, and development of thermal logical circuits.
© 2014 Optical Society of America
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