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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 17 — Jun. 10, 2014
  • pp: 3807–3813

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber

Rajib Pradhan  »View Author Affiliations

Applied Optics, Vol. 53, Issue 17, pp. 3807-3813 (2014)

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This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry–Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

© 2014 Optical Society of America

OCIS Codes
(050.2230) Diffraction and gratings : Fabry-Perot
(050.5080) Diffraction and gratings : Phase shift
(190.3270) Nonlinear optics : Kerr effect
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Nonlinear Optics

Original Manuscript: February 24, 2014
Manuscript Accepted: April 27, 2014
Published: June 10, 2014

Rajib Pradhan, "All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber," Appl. Opt. 53, 3807-3813 (2014)

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