Abstract

Nanosecond near-IR lasers are commonly used for industrial laser processing. In this paper, we demonstrate that a 70 μm diameter beam generated from a 5 W, 28 ns, near-IR (1064 nm) Nd:YAG laser can etch a silicon wafer with a lateral feature size as small as 1.3 μm. Surprisingly with this laser, microetching can also be achieved on glass, despite the low absorption of this material at this wavelength. This breakthrough is carried out in ambient air by using glass microspheres with diameters between 4 and 40 μm that generate a concentrated beam at their vicinity, a phenomenon referred to as a photonic jet. The roles of parameters such as laser fluence, pulse number, microsphere diameter, and distance between the microsphere and the sample are discussed. A good correlation has been observed between the computed photonic jet intensity distribution and the etched marks’ geometry.

© 2014 Optical Society of America

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