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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 4 — Feb. 1, 2014
  • pp: A83–A87

Optical and interfacial layer properties of SiO2 films deposited on different substrates

Yugang Jiang, Huasong Liu, Lishuan Wang, Dandan Liu, Chenghui Jiang, Xinbin Cheng, Yaping Yang, and Yiqin Ji  »View Author Affiliations

Applied Optics, Vol. 53, Issue 4, pp. A83-A87 (2014)

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SiO2 films were deposited on fused silica, silicon, glass, germanium, and sapphire substrates by an ion beam sputtering technique. The optical properties of SiO2 films on different substrates and interfacial layer properties between SiO2 films and different substrates were researched by the spectroscopic ellipsometry technique. The refractive indices of SiO2 films deposited on different substrates are about 1.477 at the wavelength of 632.8 nm. The optical anisotropy property of SiO2 films on fused silica substrate is the best. The impact of thermal treatment on surface roughness and interfacial layer properties between SiO2 films and Si substrates were also investigated. When the annealing temperature is 550°C, the least surface thickness and thinnest interface layer thickness between SiO2 films and silicon substrate can be achieved. The results indicate that the surface and interface layer properties between SiO2 films and silicon substrate can be greatly improved when the optimum annealing temperature is selected.

© 2013 Optical Society of America

OCIS Codes
(310.0310) Thin films : Thin films
(310.1620) Thin films : Interference coatings
(310.6860) Thin films : Thin films, optical properties

Original Manuscript: August 2, 2013
Revised Manuscript: October 22, 2013
Manuscript Accepted: October 23, 2013
Published: November 15, 2013

Yugang Jiang, Huasong Liu, Lishuan Wang, Dandan Liu, Chenghui Jiang, Xinbin Cheng, Yaping Yang, and Yiqin Ji, "Optical and interfacial layer properties of SiO2 films deposited on different substrates," Appl. Opt. 53, A83-A87 (2014)

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