OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 6 — Feb. 20, 2014
  • pp: 1228–1236

Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation

Reza Kohandani, Ashkan Zandi, and Hassan Kaatuzian  »View Author Affiliations


Applied Optics, Vol. 53, Issue 6, pp. 1228-1236 (2014)
http://dx.doi.org/10.1364/AO.53.001228


View Full Text Article

Enhanced HTML    Acrobat PDF (2097 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.

© 2014 Optical Society of America

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(270.1670) Quantum optics : Coherent optical effects
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

History
Original Manuscript: November 19, 2013
Revised Manuscript: January 8, 2014
Manuscript Accepted: January 9, 2014
Published: February 20, 2014

Citation
Reza Kohandani, Ashkan Zandi, and Hassan Kaatuzian, "Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation," Appl. Opt. 53, 1228-1236 (2014)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-53-6-1228


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. D. J. Gauthier, A. L. Gaeta, and R. W. Boyd, “Slow light: from basics to future prospects,” Photonics Spectra 40, 44–50 (2006).
  2. J. B. Khurgin and R. S. Tucker, Slow Light Science and Applications (CRC, 2009).
  3. W. Yan, T. Wang, X. M. Li, and Y. J. Jin, “Electromagnetically induced transparency and theoretical slow light in semiconductor multiple quantum wells,” Appl. Phys. B 108, 515–519 (2012). [CrossRef]
  4. H. Kaatuzian, Photonics, 2nd ed. (AUT, 2009), Vol. 2, in Persian.
  5. S. W. Chang, S. L. Chuang, P. C. Ku, C. J. Chang-Hasnian, P. Palinginis, and H. Wang, “Slow light using excitonic population oscillation,” Phys. Rev. B 70, 235333 (2004).
  6. D. Sun and P. C. Ku, “Slow light using P-doped semiconductor heterostructures for high-bandwidth nonlinear signal processing,” J. Lightwave Technol. 26, 3811–3817 (2008).
  7. C. J. Chang-Hasnian, P. C. Ku, J. Kim, and S. L. Chuang, “Variable optical buffer using slow light in semiconductor nanostructures,” Proc. IEEE 91, 1884–1897 (2003). [CrossRef]
  8. B. Pesala, Z. Y. Chen, A. V. Uskov, and C. Chang-Hasnain, “Experimental demonstration of slow and superluminal light in semiconductor optical amplifiers,” Opt. Express 14, 12968–12975 (2006). [CrossRef]
  9. M. M. Kash, V. A. Sautenkov, A. S. Zibrov, L. Hollberg, G. R. Welch, M. D. Lukin, Y. Rostovtsev, E. S. Fry, and M. O. Scully, “Ultra-slow group velocity and enhanced nonlinear optical effects in a coherently driven hot atomic gas,” Phys. Rev. Lett. 82, 5229–5232 (1999). [CrossRef]
  10. R. S. Knox, Theory of Excitons (Academic, 1963).
  11. H. Kaatuzian, H. Shokri Kojori, A. Zandi, and M. Ataei, “Analysis of quantum well size alteration effects on slow light device based on excitonic population oscillation,” Opt. Quantum Electron. 45, 947–959 (2013).
  12. H. Mathieu, P. Lefebvre, and P. Christol, “Simple analytical method for calculating exciton binding energies in semiconductor quantum wells,” Phys. Rev. B 46, 4092–4101 (1992).
  13. M. Bugajski, W. Kuszko, and K. Regifiski, “Diamagnetic shift of exciton energy levels in GaAs-Ga1-xAlxAs quantum wells,” Solid State Commun. 60, 669–673 (1986). [CrossRef]
  14. J. C. Maan, G. Belle, A. Fasolino, M. Altarelli, and K. Ploog, “Magneto-optical determination of exciton binding energy in GaAs-Ga1-xAlxAs quantum wells,” Phys. Rev. B 30, 2253–2256 (1984).
  15. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Band-edge electro absorption in quantum well structure: the quantum confined Stark shift,” Phys. Rev. Lett. 53, 2173–2176 (1984). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited