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Applied Optics

Applied Optics


  • Editor: Joseph N. Mait
  • Vol. 53, Iss. 6 — Feb. 20, 2014
  • pp: 1228–1236

Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation

Reza Kohandani, Ashkan Zandi, and Hassan Kaatuzian  »View Author Affiliations

Applied Optics, Vol. 53, Issue 6, pp. 1228-1236 (2014)

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This paper demonstrates the effects of applying magnetic and electric fields and physical dimensions alterations on AlGaAs/GaAs multiple quantum well (QW) slow light devices. Physical parameters include quantum well sizes and number of quantum wells. To the best of our knowledge, this is the first analysis of the effects of both applying magnetic/electric fields and physical parameters alterations and the first suggestion for matching the prefabrication and post fabrication tuning of the slow light devices based on excitonic population oscillations. The aim of our theoretical analysis is controlling the optical properties such as central frequency, bandwidth, and slow down factor (SDF) in slow light devices based on excitonic population oscillation to achieve better tuning. To reach these purposes, first we investigate the quantum well size and number of quantum wells alteration effects. Next, we analyze the effects of applying magnetic and electric fields to the multiple quantum well structure, separately. Finally, physical parameters and applied external fields are changed for measuring frequency shift and SDF for coherent population oscillation slow light devices. The results show the available central frequency shifts in about 1.6 THz at best. Also the SDF value improvement is about one order of magnitude. These results will be applicable for optical nonlinearity enhancements, all-optical signal processing, optical communications, all-optical switches, optical modulators, and variable true delays.

© 2014 Optical Society of America

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(270.1670) Quantum optics : Coherent optical effects
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Ultrafast Optics

Original Manuscript: November 19, 2013
Revised Manuscript: January 8, 2014
Manuscript Accepted: January 9, 2014
Published: February 20, 2014

Reza Kohandani, Ashkan Zandi, and Hassan Kaatuzian, "Analysis of the effects of applying external fields and device dimensions alterations on GaAs/AlGaAs multiple quantum well slow light devices based on excitonic population oscillation," Appl. Opt. 53, 1228-1236 (2014)

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