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Applied Optics

Applied Optics


  • Vol. 6, Iss. 10 — Oct. 1, 1967
  • pp: 1777–1780

Narrow Spectral Response Schottky Photodiodes

John R. Sizelove and John A. Love, III  »View Author Affiliations

Applied Optics, Vol. 6, Issue 10, pp. 1777-1780 (1967)

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Spicer’s absorption diffusion model is extended to analyze Schottky photodiodes which possess special characteristics. The model describes the generation of minority carriers by optical absorption in the bulk of a semiconductor material. The magnitude and shape of the spectral response for a minimally depleted device is found to depend on the rate of variation of the absorption coefficient with wavelength on the thickness of the absorbing region T and on the minority carrier’s diffusion length l. Narrow spectral response can exist in this device only in the wavelength region wherein the absorption coefficient α is rapidly changing. A combination of high quantum efficiency with sharp tuning is found to exist.

© 1967 Optical Society of America

Original Manuscript: March 3, 1967
Published: October 1, 1967

John R. Sizelove and John A. Love, "Narrow Spectral Response Schottky Photodiodes," Appl. Opt. 6, 1777-1780 (1967)

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  1. J. N. Shive, Semiconductor Devices (D. Van Nostrand Co., Inc., Princeton, New Jersey, 1959), p. 149.
  2. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964), p. 272.
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