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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 9, Iss. 4 — Apr. 1, 1970
  • pp: 802–809

Scanned Laser Infrared Microscope

B. Sherman and J. F. Black  »View Author Affiliations


Applied Optics, Vol. 9, Issue 4, pp. 802-809 (1970)
http://dx.doi.org/10.1364/AO.9.000802


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Abstract

In examination of ir-transmitting materials, internal irregularities and inclusions of foreign material can be detected by their effect upon the ir transmittance of the material. A scanning laser ir microscope has been constructed which produces, on an oscilloscope display, a shadowgraph picture of the ir transmittance of the material under examination. The 3.39-μ emission of a He–Ne laser serves conveniently as the ir source since many materials of interest transmit at this wavelength. The scan consists of a raster of 400 lines, and is completed in 1 sec. The detector is a room temperature operated indium arsenide photovoltaic cell, with a time constant of 2 μsec. A sample area of 1.2 cm × 1.2 cm is scanned with a focused spot having a nominal diameter of approximately 0.003 cm. The optical and electromechanical features of the microscope are described, and its application to examination of semiconductor materials is illustrated by several typical examples.

© 1970 Optical Society of America

History
Original Manuscript: July 20, 1969
Published: April 1, 1970

Citation
B. Sherman and J. F. Black, "Scanned Laser Infrared Microscope," Appl. Opt. 9, 802-809 (1970)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-9-4-802

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