OSA's Digital Library

Applied Optics

Applied Optics


  • Vol. 9, Iss. 8 — Aug. 1, 1970
  • pp: 1842–1847

A New Germanium Photodiode with Extended Long-Wavelength Response

D. P. Mathur, R. J. McIntyre, and P. P. Webb  »View Author Affiliations

Applied Optics, Vol. 9, Issue 8, pp. 1842-1847 (1970)

View Full Text Article

Enhanced HTML    Acrobat PDF (627 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



A new germanium photodiode having an extremely uniform quantum efficiency from the visible to 1.65 μ has been developed. The device consists of a lithium-drifted junction in which the light enters in a direction parallel to the junction, thereby allowing absorption path lengths of several centimeters, if desired, with essentially zero dead layer. Sensitive areas up to about 10 mm in one dimension and several centimeters in the other dimension are possible. Typical characteristics for a device 2 cm long having a sensitive area 7 mm × 7 mm are: diode capacitance, 3 pF; charge collection time, 75% of charge collected in 25 nsec at 500 V; measured NEP, 3.7 × 10−15 WHz 1 2 at 1.625 μm and 77 K for frequencies up to 30 kHz, and 5.5 × 10−13 WHz 1 2 at 1.625 μm and 195 K for frequencies up to 40 kHz. At low frequencies, the detectivity can be background limited by 300-K blackbody radiation. The device must be used and stored at reduced temperatures. A convenient cryostat, capable of maintaining the device at or near 77 K for 150 h without refilling, is described.

© 1970 Optical Society of America

Original Manuscript: November 17, 1969
Published: August 1, 1970

D. P. Mathur, R. J. McIntyre, and P. P. Webb, "A New Germanium Photodiode with Extended Long-Wavelength Response," Appl. Opt. 9, 1842-1847 (1970)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. R. L. Williams, P. P. Webb, Nucl. Ins'rum. Methods 22, No. 2, 361 (1963).
  2. See, for example, G. Dearnaley, D. C. Northrop, Semiconductor Counters for Nuclear Radiations (John Wiley & Sons, Inc., New York, 1966).
  3. W. L. Brown, W. A. Higinbotham, G. L. Miller, R. L. Chase, Eds., Semiconductor Nuclear-Particle Detectors and Circuits (Publ. 1593, National Academy of Sciences, Washington, D.C., 1969).
  4. H. R. Phillipp, E. A. Taft, Phys. Rev. 120, 37 (1960). [CrossRef]
  5. W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955). [CrossRef]
  6. T. P. McLean, in Progress in Semiconductors (John Wiley & Sons, Inc., New York, 1960), Vol. 5.
  7. E. Sakai, H. L. Malm, I. L. Fowler, “Performance of Ge(Li) Detectors Over a Wide Temperature Range,” Chalk River Rep. No. AECL-2762 (May1967); also published in Ref. 3, p. 101.
  8. “Integrated Detector–Preamplifier Assemblies,” Final Rep. (December1964), Contr. AF33(615)-1113 ARPA Order No. 268, RCA Victor Rep. No. RES-66-525-7.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited