20 December 2010, Volume 49, Issue 36, pp. 6824-7000
23 articles
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An 11,424 gate dynamic optically reconfigurable gate array VLSI chip was fabricated on a 96.04 mm2 chip using a 0.35 μm three-metal complementary metal oxide semiconductor process technology, which achieved a 2.21 μs partial reconfiguration. For details see the paper by Seto et al., pp. 6986-6994.
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