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Advances in Optics and Photonics

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  • Editor: Bahaa E. A. Saleh
  • Vol. 3, Iss. 1 — Mar. 31, 2011

Intersubband approach to silicon based lasers—circumventing the indirect bandgap limitation

Greg Sun  »View Author Affiliations


Advances in Optics and Photonics, Vol. 3, Issue 1, pp. 53-87 (2011)
http://dx.doi.org/10.1364/AOP.3.000053


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Abstract

Silicon-based lasers have long been sought, since they will permit monolithic integration of photonics with high-speed silicon electronics and thereby significantly broaden the reach of silicon technology. Among the various approaches that are currently being pursued to overcome the intrinsic limitations of Si as an efficient light source, intersubband transitions in Si-based quantum well structures offer a rather feasible alternative that conveniently circumvents the indirect-band nature of Si. Various approaches for achieving lasing action based on intersubband transitions within the group-IV materials are reviewed. Relevant theories are presented in detail. Challenges facing the valence band approach, which has not so far been successful, are analyzed, and proposals that bring the intersubband process to the conduction band are discussed.

© 2011 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.5965) Lasers and laser optics : Semiconductor lasers, quantum cascade

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: February 23, 2010
Revised Manuscript: June 23, 2010
Manuscript Accepted: July 28, 2010
Published: September 10, 2010

Virtual Issues
(2011) Advances in Optics and Photonics

Citation
Greg Sun, "Intersubband approach to silicon based lasers—circumventing the indirect bandgap limitation," Adv. Opt. Photon. 3, 53-87 (2011)
http://www.opticsinfobase.org/aop/abstract.cfm?URI=aop-3-1-53


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