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Theoretical approach to the excitonic response of GaAs nanomembranes in the averaged-strain approximation |
JOSA B, Vol. 29, Issue 2, pp. A60-A68 (2012)
http://dx.doi.org/10.1364/JOSAB.29.000A60
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Abstract
GaAs nanomembranes are thin crystalline GaAs semiconductor structures that can be bent or otherwise elastically deformed from their natural shape. We present a microscopic theory of the linear optical response of such deformed structures. Our approach combines conventional structural analysis (based on the theory of elasticity), the valence band Hamiltonians (Luttinger and Pikus–Bir) for III–V semiconductors, and the semiconductor Hamiltonian including Coulomb interaction. We formulate the general equation of motion for the interband polarization for thin elastically deformed nanomembranes. A simple limiting case results from the single-subband approximation and the averaged-strain approximation. Within this approximation scheme, we present numerical results for excitonic spectra for a cylindrically deformed membrane.
© 2012 Optical Society of America
OCIS Codes
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(350.4238) Other areas of optics : Nanophotonics and photonic crystals
History
Original Manuscript: October 4, 2011
Manuscript Accepted: November 22, 2011
Published: January 26, 2012
Citation
Baijie Gu and Rolf Binder, "Theoretical approach to the excitonic response of GaAs nanomembranes in the averaged-strain approximation," J. Opt. Soc. Am. B 29, A60-A68 (2012)
http://www.opticsinfobase.org/aop/abstract.cfm?URI=josab-29-2-A60
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