Abstract

A general scheme is described which simplifies the characterization of mixed-crystal semiconductor materials. The scheme is illustrated through the analysis of (Hg_1-<i>x</i>Cd_<i>x</i>)Te samples. Electron microprobe analyses are made at several random points on the material. A plot of the cadmium L_α x-ray intensity vs the mercury L_α x-ray intensity is compared to a stoichiometry line. The scatter of points is a measure of the homogeneity of the material while the correlation of the points with the stoichiometry line indicates the presence of off-stoichiometry material. The stoichiometry line can be theoretically determined or can be obtained using well characterized standard samples. The scheme can best be used on systems which have large composition variations and therefore supplements electrical and x-ray crystallographic methods which are sensitive to minor variations in electrical properties or crystallographic orientations.

Variations in stoichiometry in Hg₁₋xCdxTe using electrolyte electroreflectance: a topographical investigation

P. E. Vanier, Fred H. Pollak, and Paul M. Raccah
Appl. Opt. 16(11) 2858-2860 (1977)

Measurement of optical and thermal properties of Hg_1−xCd_xTe

Emily M. Heckman, Leonel P. Gonzalez, and Shekhar Guha
Appl. Opt. 47(4) 578-582 (2008)

The Measurement of Homogeneity of Optical Materials in the Visible and Near Infrared

F. W. Rosberry
Appl. Opt. 5(6) 961-966 (1966)

Rapid ellipsometric determination and mapping of alloy stoichiometry with a neural network

A Yann Battie, Adrià Canós Valero, David Horwat, and Aotmane En Naciri
Opt. Lett. 47(8) 2117-2120 (2022)

Annealing effect on structural, morphological, and optical behaviors of CBD-CdS nanostructured films for solar cells

D. Quiñonez-Urias, A. Vera-Marquina, D. Berman-Mendoza, A. L. Leal-Cruz, L. A. García-Delgado, I. E. Zaldívar-Huerta, A. García-Juárez, A. G. Rojas-Hernández, and R. Gómez-Fuentes
Opt. Mater. Express 4(11) 2280-2289 (2014)