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Optica Publishing Group
  • Applied Spectroscopy
  • Vol. 40,
  • Issue 3,
  • pp. 310-313
  • (1986)

Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry

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Abstract

Diffuse reflectance infrared Fourier transform spectrometry was applied to the determination of SiO<sub>2</sub> in SiC powders. The main peaks of SiO<sub>2</sub> were observed in the 1000-1250 cm<sup>−1</sup> region. The peak intensities were estimated from the peak height at 1150 cm<sup>−1</sup>. The intensities were little affected by the particle sizes of SiC powders in the 1-9-μm region. The linear relationship between peak intensity and concentration was obtained in the concentration range of 0-5 wt% SiO<sub>2</sub>. The analytical curve was successfully used for the determination of SiO<sub>2</sub> in a few commercial SiC powders.

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