Abstract

Physical evaporation of SiO and SiO₂ under ultra-high vacuum conditions was monitored <i>in situ</i> with infrared spectroscopy at frequencies between 450 cm⁻¹ and 5000 cm⁻¹. The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO₂ evaporation, and can be described with four Brendel oscillators located at 380 cm⁻¹, 713 cm⁻¹, 982 cm⁻¹, and 1101 cm⁻¹, corresponding to typical vibration modes in SiO.

Properties of Evaporated SiO₂, SiOxNy, and TiO₂, Films

W. Heitmann
Appl. Opt. 10(12) 2685-2689 (1971)

Laser damage study of nodules in electron-beam-evaporated HfO₂/SiO₂ high reflectors

Xinbin Cheng, Zhengxiang Shen, Hongfei Jiao, Jinlong Zhang, Bin Ma, Tao Ding, Jiangtao Lu, Xiaodong Wang, and Zhanshan Wang
Appl. Opt. 50(9) C357-C363 (2011)

Optical and mechanical characterization of evaporated SiO₂ layers. Long-term evolution

K. Scherer, L. Nouvelot, P. Lacan, and R. Bosmans
Appl. Opt. 35(25) 5067-5072 (1996)

HfO₂/SiO₂ chirped mirrors manufactured by electron beam evaporation

Zhang Jinlong, Cheng Xinbin, Wang Zhanshan, Jiao Hongfei, and Ding Tao
Appl. Opt. 50(9) C388-C391 (2011)

Infrared interference coating by use of Si₃N₄ and SiO₂ films with ion-assisted deposition

Cheng-Chung Lee and Shih-Liang Ku
Appl. Opt. 49(3) 437-441 (2010)