Abstract

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O₃) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiH_x (<i>x</i> = 1-3), O_ySiH (<i>y</i> = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O₂SiH band amplitude.

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