Abstract
In undoped quartz glass (e.g., Suprasil W 1) defects of the type Si<sup>+</sup>O<sup>−</sup> are found, presumably caused by breaks in Si—O bonds. The Raman bands at 490 and 600 cm<sup>−1</sup> are correlated to these defects, as shown by Bates <i>et al.</i> by irradiation of quartz glass with neutrons. With increasing irradiation the intensity of the bands at 490 and 600 cm<sup>−1</sup> increased, as well. At 2 × 10<sup>20</sup> neutrons/cm<sup>2</sup> the band 600 cm<sup>−1</sup> increased by a factor of 7.3 compared to the sample without irradiation. Interpretation of this increase as caused by an increase in the number of Si<sup>+</sup>O<sup>−</sup> defects is supported by results from x-ray small angle scattering. On the other hand, Walrafen reports a decrease in the intensities of the 490 and 600 cm<sup>−1</sup> bands by doping SiO<sub>2</sub> glass with GeO<sub>2</sub> or B<sub>2</sub>O<sub>3</sub> as well as a small decrease of these bands with increasing content of OH. These facts are explained by interaction of the dopants with the Si<sup>+</sup>O<sup>−</sup> defects.
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