Abstract

The use of an optical spectrographic system in the study of a CF₃H plasma process has been investigated. CF₃H plasma etch rates of SiO₂ are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO₂ is etched with a CF₃H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

Influence of self-absorption on plasma diagnostics by emission spectral lines

Evgueni Gudimenko, Vladimir Milosavljević, and Stephen Daniels
Opt. Express 20(12) 12699-12709 (2012)

Quantitative analysis of Fuller’s earth using laser-induced breakdown spectroscopy and inductively coupled plasma/optical emission spectroscopy

I. Rehan, M. Z. Khan, K. Rehan, S. Sultana, M. U. Rehman, R. Muhammad, M. Ikram, and H. Anwar
Appl. Opt. 58(16) 4227-4233 (2019)

Argon plasma etching of fused silica substrates for manufacturing high laser damage resistance optical interference coatings

Kęstutis Juškevičius, Rytis Buzelis, Giedrius Abromavičius, Romanas Samuilovas, Saulė Abbas, Alexandr Belosludtsev, Ramutis Drazdys, and Simonas Kičas
Opt. Mater. Express 7(10) 3598-3607 (2017)

Tomographic optical emission spectroscopy of a high enthalpy air plasma flow

Tobias Hermann, Stefan Löhle, Stefanos Fasoulas, and Andreas Andrianatos
Appl. Opt. 55(36) 10290-10298 (2016)

Time-resolved resonance fluorescence spectroscopy for study of chemical reactions in laser-induced plasmas

Lei Liu, Leimin Deng, Lisha Fan, Xi Huang, Yao Lu, Xiaokang Shen, Lan Jiang, Jean-François Silvain, and Yongfeng Lu
Opt. Express 25(22) 27000-27007 (2017)