Abstract

Thin films of garnet grown by liquid phase epitaxy have been studied by means of the electronic Raman effect. It is shown that films of moderate thickness (about 10 to 20 μm) can be measured directly, without using difficult lightguiding techniques. The method has been applied successfully to the study of electronic Raman transitions of the Tb³⁺ ion in yttrium aluminium garnet. In this way two transitions were measured in the ground state ⁷F₆ and seven transitions between the ground state ⁷F₆ and the first excited state ⁷F₅. From these results, it is concluded that in crystalline films of yttrium aluminium garnet, terbium substitutes for yttrium in the same way as it does in single crystals.

Ambient and high pressure spectroscopy of Ce³⁺ doped yttrium gallium garnet

A. Wittlin, H. Przybylińska, M. Berkowski, A. Kamińska, P. Nowakowski, P. Sybilski, Chong-Geng Ma, M.G. Brik, and A. Suchocki
Opt. Mater. Express 5(8) 1868-1880 (2015)

Phonon and Electronic Raman Spectra of Cubic Rare-Earth Oxides and Isomorphous Yttrium Oxide*

G. Schaack and J. A. Koningstein
J. Opt. Soc. Am. 60(8) 1110-1115 (1970)

Liquid phase epitaxy growth and visible emission of Tb³⁺,Gd³⁺:LiYF₄ layers

Amandine Baillard, Gurvan Brasse, Pavel Loiko, Rosa Maria Solé, Magdalena Aguiló, Francesc Díaz, Xavier Mateos, Abdelmjid Benayad, Vivien Ménard, Alain Braud, and Patrice Camy
Opt. Mater. Express 13(8) 2355-2368 (2023)

Laser performance of highly neodymium-doped yttrium aluminum garnet crystals

Y. Urata, S. Wada, H. Tashiro, and P. Deng
Opt. Lett. 26(11) 801-803 (2001)

Infrared Lattice Spectra of Rare-Earth Aluminum, Gallium, and Iron Garnets

Neil T. McDevitt
J. Opt. Soc. Am. 59(9) 1240-1244 (1969)