Abstract

Optical methods for the detection of atomic fluorine in plasma etch systems are discussed and an experimental comparison is made between detection by optical emission and by a novel method based on the chemiluminescence from solid silicon in the presence of atomic fluorine. Although both methods are, in principle, subject to interferences, they can readily be used for plasma etch process optimization and for end point detection.

Fluorine incorporation into porous silica by gas phase doping with C₂F₆ in N₂

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Analysis of Hydrogen Fluoride Infrared Chemiluminescence from Simple Atom–Molecule Reactions

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Changeover in the molecular and atomic fluorine laser transitions

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Laser ablation- and plasma etching-based patterning of graphene on silicon-on-insulator waveguides

Jürgen Van Erps, Tymoteusz Ciuk, Iwona Pasternak, Aleksandra Krajewska, Wlodek Strupinski, Steven Van Put, Geert Van Steenberge, Kitty Baert, Herman Terryn, Hugo Thienpont, and Nathalie Vermeulen
Opt. Express 23(20) 26639-26650 (2015)