Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry
Applied Spectroscopy, Vol. 40, Issue 3, pp. 310-313 (1986)
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Abstract
Diffuse reflectance infrared Fourier transform spectrometry was applied to the determination of SiO2 in SiC powders. The main peaks of SiO2 were observed in the 1000-1250 cm−1 region. The peak intensities were estimated from the peak height at 1150 cm−1. The intensities were little affected by the particle sizes of SiC powders in the 1-9-μm region. The linear relationship between peak intensity and concentration was obtained in the concentration range of 0-5 wt% SiO2. The analytical curve was successfully used for the determination of SiO2 in a few commercial SiC powders.
Citation
Akira Tsuge, Yoshinori Uwamino, and Toshio Ishizuka, "Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry," Appl. Spectrosc. 40, 310-313 (1986)
http://www.opticsinfobase.org/as/abstract.cfm?URI=as-40-3-310
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