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Applied Spectroscopy

Applied Spectroscopy

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  • Vol. 40, Iss. 3 — Mar. 1, 1986
  • pp: 310–313

Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry

Akira Tsuge, Yoshinori Uwamino, and Toshio Ishizuka

Applied Spectroscopy, Vol. 40, Issue 3, pp. 310-313 (1986)


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Abstract

Diffuse reflectance infrared Fourier transform spectrometry was applied to the determination of SiO<sub>2</sub> in SiC powders. The main peaks of SiO<sub>2</sub> were observed in the 1000-1250 cm<sup>−1</sup> region. The peak intensities were estimated from the peak height at 1150 cm<sup>−1</sup>. The intensities were little affected by the particle sizes of SiC powders in the 1-9-μm region. The linear relationship between peak intensity and concentration was obtained in the concentration range of 0-5 wt% SiO<sub>2</sub>. The analytical curve was successfully used for the determination of SiO<sub>2</sub> in a few commercial SiC powders.

Citation
Akira Tsuge, Yoshinori Uwamino, and Toshio Ishizuka, "Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry," Appl. Spectrosc. 40, 310-313 (1986)
http://www.opticsinfobase.org/as/abstract.cfm?URI=as-40-3-310

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