Diffuse reflectance infrared Fourier transform spectrometry was applied to the determination of SiO<sub>2</sub> in SiC powders. The main peaks of SiO<sub>2</sub> were observed in the 1000-1250 cm<sup>−1</sup> region. The peak intensities were estimated from the peak height at 1150 cm<sup>−1</sup>. The intensities were little affected by the particle sizes of SiC powders in the 1-9-μm region. The linear relationship between peak intensity and concentration was obtained in the concentration range of 0-5 wt% SiO<sub>2</sub>. The analytical curve was successfully used for the determination of SiO<sub>2</sub> in a few commercial SiC powders.
Akira Tsuge, Yoshinori Uwamino, and Toshio Ishizuka, "Determination of Silicon Dioxide in Silicon Carbide by Diffuse Reflectance Infrared Fourier Transform Spectrometry," Appl. Spectrosc. 40, 310-313 (1986)