Abstract
ICP spectroscopy utilizing both gaseous and/or liquid sample introduction was used to model chemical components produced in plasma etch reactors. Single plasma gas chemistries including Ar and CF<sub>4</sub> and additive gas systems of CHF<sub>3</sub>-O<sub>2</sub> and CF<sub>4</sub>-O<sub>2</sub> were characterized with the use of a dispersive monochromator/photodiode array detection system. Experimental techniques and equipment comparisons of plasma sources and detection systems for plasma chemistry modeling are discussed. Identification of atomic and molecular species produced in each plasma source for these gas chemistries and sample components was determined and compared.
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