Thickness-Dependent Frequency Shift in Infrared Spectral Absorbance of Silicon Oxide Film on Silicon
Applied Spectroscopy, Vol. 44, Issue 6, pp. 970-974 (1990)
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Abstract
The spectral dependence of the refractive index n and extinction coefficient k of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (vM) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, vM corresponds to the maximum of the Im (ε) function.
Citation
Marta Klanjšek Gunde and Boris Aleksandrov, "Thickness-Dependent Frequency Shift in Infrared Spectral Absorbance of Silicon Oxide Film on Silicon," Appl. Spectrosc. 44, 970-974 (1990)
http://www.opticsinfobase.org/as/abstract.cfm?URI=as-44-6-970
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