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Applied Spectroscopy

Applied Spectroscopy

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  • Vol. 54, Iss. 2 — Feb. 1, 2000
  • pp: 209–213

Thermal Cure Study of a Low-k Methyl Silsesquioxane for Intermetal Dielectric Application by FT-IR Spectroscopy

C. Y. Wang, Z. X. Shen, and J. Z. Zheng

Applied Spectroscopy, Vol. 54, Issue 2, pp. 209-213 (2000)


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Abstract

In this paper, Fourier transform infrared (FT-IR) spectroscopy is used to study the thermal properties of methyl silsesquioxane (MSQ), an important low-dielectric-constant organic spin-on glass for semiconductor device fabrication. The compositional and structural changes of MSQ with temperature are investigated in detail. The cross-linking process, where the three-dimensional networked structure is formed, is found to start at room temperature, and is almost complete at the typical baking temperature of 250 °C. Further cross-linking occurs during the curing process at 425 °C, and small short-chain clusters can also be driven away at this temperature by sublimation. In this study, we have assigned all the MSQ IR peaks and we have used the long-chain O-Si-O IR peak to calculate the "degree of cross-linking" quantitatively.

Citation
C. Y. Wang, Z. X. Shen, and J. Z. Zheng, "Thermal Cure Study of a Low-k Methyl Silsesquioxane for Intermetal Dielectric Application by FT-IR Spectroscopy," Appl. Spectrosc. 54, 209-213 (2000)
http://www.opticsinfobase.org/as/abstract.cfm?URI=as-54-2-209


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