We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiHx (x = 1-3), OySiH (y = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O2SiH band amplitude.
Caley A. Caras, Justin M. Reynard, Randi E. Deuro, and Frank V. Bright, "Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation," Appl. Spectrosc. 66, 951-957 (2012)
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