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Applied Spectroscopy

Applied Spectroscopy

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  • Vol. 66, Iss. 8 — Aug. 1, 2012
  • pp: 951–957

Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation

Caley A. Caras, Justin M. Reynard, Randi E. Deuro, and Frank V. Bright

Applied Spectroscopy, Vol. 66, Issue 8, pp. 951-957 (2012)


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Abstract

We carefully evaluate how porous silicon (pSi) surface oxidation by ozone (O3) and the resulting changes in nanocrystallite surface chemistries (e.g., SiOSi, SiHx (x = 1-3), OySiH (y = 1-2), and SiOH) influence the pSi photoluminescence (PL). We discover a relationship between the pSi PL and the O2SiH band amplitude.

Citation
Caley A. Caras, Justin M. Reynard, Randi E. Deuro, and Frank V. Bright, "Link Between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation," Appl. Spectrosc. 66, 951-957 (2012)
http://www.opticsinfobase.org/as/abstract.cfm?URI=as-66-8-951


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