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Chinese Optics Letters

Chinese Optics Letters


  • Vol. 1, Iss. 11 — Nov. 20, 2003
  • pp: 677–679

Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

Hongjian Li, Baiyun Huan, Danqing Yi, Haoyang Cui, and Jingcui Peng  »View Author Affiliations

Chinese Optics Letters, Vol. 1, Issue 11, pp. 677-679 (2003)

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We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

© 2005 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

Hongjian Li, Baiyun Huan, Danqing Yi, Haoyang Cui, and Jingcui Peng, "Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact," Chin. Opt. Lett. 1, 677-679 (2003)

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