OSA's Digital Library

Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 11 — Nov. 20, 2003
  • pp: 677–679

Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

Hongjian Li, Baiyun Huan), Danqing Yi, Haoyang Cui, and Jingcui Peng  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 11, pp. 677-679 (2003)


View Full Text Article

Acrobat PDF (392 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600 - 803 nm with a peak at 690 nm.

© 2005 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

Citation
Hongjian Li, Baiyun Huan), Danqing Yi, Haoyang Cui, and Jingcui Peng, "Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact," Chin. Opt. Lett. 1, 677-679 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-11-677


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
  2. L. Pavesi, R. Chierchia, P. Bellutti, A. Lui, F. Fuso, M. Labardi, L. Pardi, F. Sbrana, M. Allegrini, S. Trusso, C. Vasi, P. J. Ventura, L. C. Costa, M. C. Carmo, and O. Bisi, J. Appl. Phys. 86, 6474 (1999).
  3. H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).
  4. R. C. Egeberg, E. Veje, A. Ferreira da Silva, I. Pepe, and A. Alves, J. Porous Matter 7, 173 (2000).
  5. A. Ferreira da Silva, R. R. Rosa, L. S. Roman, E. Veje, and I. Pepe, Solid State Commun. 113, 703 (2000).
  6. L. T. Canham, C. L. Reeves, A. Leni, M. R. Houlton, J. P. Newey, A. J. Simons, and T. I. Cox, Thin Solid Films 304, 297 (1997).
  7. L. Buckberry and S. C. Bayliss, Materials World 7, 213 (1999).
  8. M. Jayachandran, M. Paramasivam, K. R. Murali, D. C. Trivedi, and M. Raghavan, Mater. Phys. Mech. 41, 43 (2001).
  9. A. Bsiesy, Y. F. Nicolau, A. Ermolieff, F. Muller, and F. Gaspard, Thin Solid Films 255, 43 (1995).
  10. H. J. Li, J. C. Peng, S. Qu, Y. Yan, X. M. Xue, and C. J. Zhao, Chin. Phys. Lett. 19, 1013 (2002).
  11. C. Faivre and D. Bellet, J. Appl. Cryst. 32, 1134 (1999).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited