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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 12 — Dec. 20, 2003
  • pp: 716–718

Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

Sipeng Gu, Lisong Hou, Qitao Zhao, and Rui'an Huang  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 12, pp. 716-718 (2003)


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Abstract

To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.

© 2005 Chinese Optics Letters

OCIS Codes
(210.0210) Optical data storage : Optical data storage
(210.4810) Optical data storage : Optical storage-recording materials

Citation
Sipeng Gu, Lisong Hou, Qitao Zhao, and Rui'an Huang, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films," Chin. Opt. Lett. 1, 716-718 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-12-716

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