To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.
© 2005 Chinese Optics Letters
Sipeng Gu, Lisong Hou, Qitao Zhao, and Rui'an Huang, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films," Chin. Opt. Lett. 1, 716-718 (2003)