Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films
Chinese Optics Letters, Vol. 1, Issue 12, pp. 716-718 (2003)
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Abstract
To improve the optical storage performance, Sn was doped into Ge_(2)Sb_(2)Te_(5) phase change thin films. The optical and thermal properties of Sn-doped Ge_(2)Sb_(2)Te_(5) film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge_(2)Sb_(2)Te_(5) media.
© 2005 Chinese Optics Letters
OCIS Codes
(210.0210) Optical data storage : Optical data storage
(210.4810) Optical data storage : Optical storage-recording materials
Citation
Sipeng Gu, Lisong Hou, Qitao Zhao, and Rui'an Huang, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films," Chin. Opt. Lett. 1, 716-718 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-12-716
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