Abstract
In this paper, the GaN based epitaxial wafer is fabricated on big 1 mm ×1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210, 000 cd/m2 and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.
© 2005 Chinese Optics Letters
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription