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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 9 — Sep. 20, 2003
  • pp: 553–555

Photon-activated charge domain in high-gain photoconductive switches

Wei Shi, Huiying Dai, and Xiaowei Sun  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 9, pp. 553-555 (2003)


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Abstract

We report our experimental observation of charge domain oscillation in semi-insulating GaAs photoconductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 10^(12) cm^(-2). We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains.

© 2005 Chinese Optics Letters

OCIS Codes
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
Wei Shi, Huiying Dai, and Xiaowei Sun, "Photon-activated charge domain in high-gain photoconductive switches," Chin. Opt. Lett. 1, 553-555 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-9-553


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