Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser
Chinese Optics Letters, Vol. 10, Issue 10, pp. 102501-102501 (2012)
Acrobat PDF (1238 KB)
Abstract
Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.
© 2012 Chinese Optics Letters
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.4555) Optical devices : Coupled resonators
(250.5960) Optoelectronics : Semiconductor lasers
ToC Category:
Optoelectronics
Citation
Jialiang Jin, Lei Wang, and Jianjun He, "Digital wavelength switching by thermal and carrier injection effects in
V-coupled cavity semiconductor laser," Chin. Opt. Lett. 10, 102501-102501 (2012)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-10-10-102501
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
Related Journal Articles 
- Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader (OL)
- Mutual optical injection in coupled DBR laser pairs (OE)
- High speed and wide temperature range uncooled 1.3-\mu m ridge waveguide DFB lasers (COL)
- Spectral engineering of semiconductor Fabry-Perot laser cavities in the weakly and strongly perturbed regimes (JOSAB)
- Widely wavelength switchable V-coupled-cavity semiconductor laser with ∼40 dB side-mode suppression ratio (OL)
Related Conference Papers
- Phase Preserving Wavelength Conversion over 6 THz in a Silicon Coupled Resonator Optical Waveguide
- Phase Preserving Wavelength Conversion over 6 THz in a Silicon Coupled Resonator Optical Waveguide
- High-Speed Modulation Lasers for 100GbE Applications
- 40-Gbps Transmission Using Direct Modulation of 1.3-μm AlGaInAs MQW Distributed-Reflector Lasers up to 70 degrees Celsius
- 25.8Gbps Direct Modulation AlGaInAs DFB Lasers with Ru-doped InP Buried Heterostructure for 70°C operation
- High-Speed Directly Modulated Lasers
« Previous Article | Next Article »
OSA is a member of 