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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 11, Iss. 1 — Jan. 1, 2013
  • pp: 011901–

Resonant Raman scattering in GaN single crystals and GaN-based heterostructures: feasibility for laser cooling

Yujie J. Ding and Jacob B. Khurgin  »View Author Affiliations


Chinese Optics Letters, Vol. 11, Issue 1, pp. 011901- (2013)


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Abstract

The recent progress on Raman scattering in GaN single crystals and GaN/AlN heterostructures is reviewed. Anti-Stokes Raman scattering is used to determine electron-phonon scattering time and decay time constant for longitudinal-optical phonons. In a typical high electron mobility transistor based on GaN/AlN heterostructures, strong resonances are reached for the first-order and second-order Raman scattering processes. Therefore, both Stokes and anti-Stokes Raman intensities are dramatically enhanced. The feasibility for laser cooling of a nitride structure is studied. A further optimization will enable us to reach the threshold for laser cooling. Raman scattering have potential applications in up-conversion lasers and laser cooling of nitride ultrafast electronic and optoelectronic devices.

© 2013 Chinese Optics Letters

OCIS Codes
(190.5650) Nonlinear optics : Raman effect
(190.7220) Nonlinear optics : Upconversion

Citation
Yujie J. Ding and Jacob B. Khurgin, "Resonant Raman scattering in GaN single crystals and GaN-based heterostructures: feasibility for laser cooling," Chin. Opt. Lett. 11, 011901- (2013)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-11-1-011901


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