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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 11,
  • Issue 11,
  • pp. 112501-
  • (2013)

Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs

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Abstract

The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.

© 2013 Chinese Optics Letters

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