Abstract
We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum
efficiency by assembling silicon resonant waveguide gratings for the application of
polarization sensitive systems. The measured results show that quantum efficiency of
the photodetector with silicon resonant waveguide gratings can be increased by 31.6%
compared with that without silicon resonant waveguide gratings at the wavelength
range of 1500 to 1600 nm for TE-polarization.
© 2014 Chinese Optics Letters
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