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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 2, Iss. 11 — Nov. 10, 2004
  • pp: 647–649

High power AlGaInP laser diodes with zinc-diffused window mirror structure

Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, and Lianghui Chen  »View Author Affiliations


Chinese Optics Letters, Vol. 2, Issue 11, pp. 647-649 (2004)


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Abstract

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-?m-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-?m-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

© 2005 Chinese Optics Letters

OCIS Codes
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7300) Lasers and laser optics : Visible lasers

Citation
Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, and Lianghui Chen, "High power AlGaInP laser diodes with zinc-diffused window mirror structure," Chin. Opt. Lett. 2, 647-649 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-11-647


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