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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 2, Iss. 2 — Feb. 10, 2004
  • pp: 95–97

Optical transitions in strained InAsSb/GaInSb interband QC lasers

Ligong Yang, Peifu Gu, and Xiaoyun Qin  »View Author Affiliations


Chinese Optics Letters, Vol. 2, Issue 2, pp. 95-97 (2004)


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Abstract

In this paper a detailed simulation and theoretical analysis based on model-solid theory and the k.p method are presented to investigate the dependence of the band structure on the strain deformation in a novel type-II quantum well (QW) heterostructure InAs_{1-y}Sb_{y}/Ga_{x}In_{1-x}Sb under the uniaxial approximation, and subsequently the optical transition and the gain in the interband cascade lasers containing it have been evaluated with unchanged injection current densities. The simulation results show that the strain effect on the transition in this heterostructure will not behave as a simple monotonic trend with the lattice mismatch of InAs_{1-y}Sb_{y}/Ga_{x}In_{1-x}Sb interface, but as a function of the complex strain chain including the whole active region. It is important to the subsequent device design and optimization.

© 2005 Chinese Optics Letters

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.3380) Lasers and laser optics : Laser materials
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials

Citation
Ligong Yang, Peifu Gu, and Xiaoyun Qin, "Optical transitions in strained InAsSb/GaInSb interband QC lasers," Chin. Opt. Lett. 2, 95-97 (2004)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-2-2-95

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