Abstract

Polysilicon films deposited by low-pressure chemical vapor deposition (LPCVD) exhibit large residual stress and stress gradient, depending on the deposition condition. An in situ growth method based on multi-layer concept is presented to control the property for as-deposited polysilicon. A 3-?m-thick polysilicon film with nine layers structure is demonstrated under the detailed analysis of multi-layer theory and material characteristic of polysilicon. The results show that a 3-?m-thick polysilicon film with 8-MPa overall residual tensile stress and 2.125-MPa/?m stress gradient through the film thickness is fabricated successfully.

© 2005 Chinese Optics Letters

Hot-wire polysilicon waveguides with low deposition temperature

Taha M. Ben Masaud, Antulio Tarazona, Ehsan Jaberansary, Xia Chen, Graham T. Reed, Goran Z. Mashanovich, and H. M. H. Chong
Opt. Lett. 38(20) 4030-4032 (2013)

In situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements

H. C. Neitzert, W. Hirsch, M. Kunst, and M. E. A. Nell
Appl. Opt. 34(4) 676-680 (1995)

Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications

Svetlana Shestaeva, Astrid Bingel, Peter Munzert, Lilit Ghazaryan, Christian Patzig, Andreas Tünnermann, and Adriana Szeghalmi
Appl. Opt. 56(4) C47-C59 (2017)

Laser reflectometry in situ measurement of lead zirconate titanate film growth

Y. Beaudoin, M. Chaker, T. W. Johnston, and H. Pépin
Appl. Opt. 36(3) 655-657 (1997)

Optical fiber-based sensor for in situ monitoring of cadmium sulfide thin-film growth

Farzia Karim, Tanujjal Bora, Mayur B. Chaudhari, Khaled Habib, Waleed S. Mohammed, and Joydeep Dutta
Opt. Lett. 38(24) 5385-5388 (2013)