The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.
© 2005 Chinese Optics Letters
(170.6280) Medical optics and biotechnology : Spectroscopy, fluorescence and luminescence
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties
Ruijin Hong, Jianda Shao, Hongbo He, and Zhengxiu Fan, "Effects of oxygen partial pressure on optical absorption edge and UV emission energy of ZnO films," Chin. Opt. Lett. 3, 428-431 (2005)