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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 6, Iss. 11 — Nov. 1, 2008
  • pp: 804–806

Energy levels and radiative lifetimes of 3pns 3P0 and 3pnd 3P0 series of Si I

Liang Liang, Chao Zhou, and Ling Zhang  »View Author Affiliations


Chinese Optics Letters, Vol. 6, Issue 11, pp. 804-806 (2008)


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Abstract

The energy levels and lifetimes of 3pns 3P0(n=7-35) and 3pnd 3P0 (n=6-17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p3 is discussed. The 3pnd 3P0 series, especially 3p4d 3P0, 3p5d 3P0, and 3p6d 3P0 are perturbed strongly by the core-excited state 3s3p3 3P0. These cause the lifetime of 3pnd 3P0 (n=5-7) to be less than that of 3p4d 3P0. The lifetimes of 3p14d 3P0 (65479.14 cm-1) and 3p16d 3P0 (65608.77 cm-1) are less than that of their frontal states respectively, because these states are perturbed by 3p22s 3P0 (65476.48 cm-1) and 3p30s 3P0 (65608.99 cm-1) respectively.

© 2008 Chinese Optics Letters

OCIS Codes
(020.2930) Atomic and molecular physics : Hyperfine structure
(020.5780) Atomic and molecular physics : Rydberg states

Citation
Liang Liang, Chao Zhou, and Ling Zhang, "Energy levels and radiative lifetimes of 3pns 3P0 and 3pnd 3P0 series of Si I," Chin. Opt. Lett. 6, 804-806 (2008)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-6-11-804


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