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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 9, Iss. 8 — Aug. 10, 2011
  • pp: 082301–082301

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

Zan Dong, Wei Wang, Beiju Huang, Xu Zhang, Ning Guan, and Hongda Chen  »View Author Affiliations


Chinese Optics Letters, Vol. 9, Issue 8, pp. 082301-082301 (2011)


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Abstract

Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85\times 38.4 (\mu m), threshold voltage is 2.2 V in common condition, and temperature is 27 oC. The external quantum efficiency is about 10^{-6} at stable operating state of 5 V and 177 mA.

© 2011 Chinese Optics Letters

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices
(250.5300) Optoelectronics : Photonic integrated circuits

Citation
Zan Dong, Wei Wang, Beiju Huang, Xu Zhang, Ning Guan, and Hongda Chen, "Low threshold voltage light-emitting diode in silicon-based standard CMOS technology," Chin. Opt. Lett. 9, 082301-082301 (2011)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-9-8-082301

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