In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
© 2005 Chinese Optics Letters
Xiaohua Wang, Xiwu Fan, Chongxin Shan, Jiying Zhang, Zhenzhong Zhang, Youming Lu, Yichun Liu, Zhongyuan Jia, Jingchang Zhong, and Dezhen Shen, "Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer," Chin. Opt. Lett. 1, 668-670 (2003)