Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer
Chinese Optics Letters, Vol. 1, Issue 11, pp. 668-670 (2003)
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Abstract
In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
© 2005 Chinese Optics Letters
OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(290.5860) Scattering : Scattering, Raman
Citation
Xiaohua Wang, Xiwu Fan, Chongxin Shan, Jiying Zhang, Zhenzhong Zhang, Youming Lu, Yichun Liu, Zhongyuan Jia, Jingchang Zhong, and Dezhen Shen, "Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer," Chin. Opt. Lett. 1, 668-670 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-11-668
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