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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 11 — Nov. 20, 2003
  • pp: 668–670

Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer

Xiaohua Wang, Xiwu Fan, Chongxin Shan, Jiying Zhang, Zhenzhong Zhang, Youming Lu, Yichun Liu, Zhongyuan Jia, Jingchang Zhong, and Dezhen Shen  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 11, pp. 668-670 (2003)


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Abstract

In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.

© 2005 Chinese Optics Letters

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(290.5860) Scattering : Scattering, Raman

Citation
Xiaohua Wang, Xiwu Fan, Chongxin Shan, Jiying Zhang, Zhenzhong Zhang, Youming Lu, Yichun Liu, Zhongyuan Jia, Jingchang Zhong, and Dezhen Shen, "Growth and optical characteristics of ZnCdSe/ZnSe QWs on Si substrate with ZnO buffer," Chin. Opt. Lett. 1, 668-670 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-11-668

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