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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 4 — Apr. 20, 2003
  • pp: 217–219

High-speed electrooptical VOA integrated in silicon-on-insulator

Qingfeng Yan, Jinzhong Yu, Jinsong Xia, and Zhongli Liu  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 4, pp. 217-219 (2003)


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Abstract

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) integrated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption to achieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simulation tool PISCES-II were used to analyze the dc and transient characteristics of the device. The device has a response time (including rise time and fall time) less than 200 ns, much faster than the thermooptic and micro-electromechanical systems (MEMSs) based VOAs.

© 2005 Chinese Optics Letters

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(250.7360) Optoelectronics : Waveguide modulators

Citation
Qingfeng Yan, Jinzhong Yu, Jinsong Xia, and Zhongli Liu, "High-speed electrooptical VOA integrated in silicon-on-insulator," Chin. Opt. Lett. 1, 217-219 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-4-217

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