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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 4 — Apr. 20, 2003
  • pp: 220–221

Fabrication of blue LEDs on big chips

Zongyou Yin, Densen Cao, Jingzhi Yin, Yuantao Zhang, Zhengting Li, Guotong Du, and Shuren Yang  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 4, pp. 220-221 (2003)


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Abstract

In this paper, the GaN based epitaxial wafer is fabricated on big 1 mm ×1 mm chips, and packaged with a special technology. At working current 350 mA and working voltage 3.74 V, the full viewing angle, the axial brightness and the output integral power of the 465 nm LED can reach 125°, 210, 000 cd/m2 and 1.5 lm, respectively. The LED with such good performances has promising application potential in the fields of display, traffic and the development of solid-state white light source.

© 2005 Chinese Optics Letters

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes

Citation
Zongyou Yin, Densen Cao, Jingzhi Yin, Yuantao Zhang, Zhengting Li, Guotong Du, and Shuren Yang, "Fabrication of blue LEDs on big chips," Chin. Opt. Lett. 1, 220-221 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-4-220


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References

  1. M. G. Craford, N. Holonyak, and F. A. Kish, Science 5, 43 (2001).
  2. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 32, L8 (1993).
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  4. S. Nakamura and G. Fasol, The Blue Laser Diode (GaN Based Light Emitters and Lasers) (1997) p. 216.
  5. S. Nakamura and G. Fasol, The Blue Laser Diode (GaN Based Light Emitters and Lasers) (1997) p. 7.

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