We observe enhanced terahertz (THz) radiation generated from a Si_(3)N_(4) film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si_(3)N_(4) film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si_(3)N_(4) film-coated layer.
© 2005 Chinese Optics Letters
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
Wei Shi, Jingzhou Xu, and X.-C. Zhang, "Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna," Chin. Opt. Lett. 1, 308-310 (2003)