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Chinese Optics Letters

Chinese Optics Letters

| PUBLISHED MONTHLY BY CHINESE LASER PRESS AND DISTRIBUTED BY OSA

  • Vol. 1, Iss. 5 — May. 20, 2003
  • pp: 308–310

Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna

Wei Shi, Jingzhou Xu, and X.-C. Zhang  »View Author Affiliations


Chinese Optics Letters, Vol. 1, Issue 5, pp. 308-310 (2003)


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Abstract

We observe enhanced terahertz (THz) radiation generated from a Si_(3)N_(4) film-coated GaAs photoconductive dipole antenna. Compared to an uncoated antenna with identical electrode geometry and optical excitation power, the Si_(3)N_(4) film-coated antenna has a higher effective DC resistance and larger breakdown voltage. As a result, the peak amplitude of generated THz radiation is significantly enhanced due to the Si_(3)N_(4) film-coated layer.

© 2005 Chinese Optics Letters

OCIS Codes
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
Wei Shi, Jingzhou Xu, and X.-C. Zhang, "Terahertz generation from Si_(3)N_(4) covered photoconductive dipole antenna," Chin. Opt. Lett. 1, 308-310 (2003)
http://www.opticsinfobase.org/col/abstract.cfm?URI=col-1-5-308


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